1996

(1)J. Harada, I. Takahashi, Y. Itoh, N. S. Sokolov, N. L. Yakovlev, Y. Shustermann, J. C. Alvarez: X-ray scattering from surfaces and interfaces and its application to the characterization of CaF2/Si(111) interfaces, J. Cryst. Growth 63 31-38.

(2)T. Shimura, H. Misaki, M. Umeno, I. Takahashi, J. Harada:X-ray diffraction evidence for the existence of epitaxial microcrystallites in thermally oxidized SiO2 thin films on Si(111) surfaces, J. Cryst. Growth 166 786-791.

(3)Y. Itoh, I. Takahashi, A. Ichimiya, J. Harada, N. S. Sokolov: Structure of CaF2/Si(111) long interface, J. Cryst. Growth 166 61-66.

(4)高橋　功，伊藤洋文，原田仁平： Si(111)面上CaF2薄膜の界面構造，日本結晶学会誌　38　400-406.

(5)N. S. Sokolov, J. C. Alvalez, S. V. Gastev, Yu. V. Shustermann, I. Takahashi, Y. Itoh, J. Harada, R. M. Overney: High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface, J. Cryst. Growth 169 40-50.

(6)T. Shimura, I. Takahashi, J. Harada and M. Umeno: X-ray diffractionevidence for crystalline SiO2 in thermal oxide layers on Si substrates,The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, The Electrochemical Society, Pennington NJ, 1996 456-467.