1997

(1)J. Harada, I. Takahashi, T. Shimura. M. Umeno: Thermally oxidized layers on Si-wafers-Surface X-ray scattering and field ion microscopy-. Advances in the Understanding of Crystal Growth Mechanism Ed. T. Nishinaga et al., 1997 Elsevier Science B. V. 247-266.

(2)T. Shimura, M. Umeno, I. Takahashi, J. Harada: Comment on “Observation of a disordered epitaxial oxide in thermally grown SiO2 on Si(001), Phys. Rev. Lett. 79 4932.